15 March 2019, India:
Samsung Electronics announced that it has begun mass producing the 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) RAM. The 12 GB RAM will be used in Next-generation’s premium smartphones.
Featuring higher capacity than many ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.
Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics, said, “With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage.”
Sewon Chun, added, “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”
The 12GB capacity has been achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery.
In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity, the company said in a statement.
Samsung Mobile DRAM Journey
| Date | Capacity | Mobile DRAM |
| Feb. 2019 | 12GB | 1y-nm 16Gb LPDDR4X, 4266Mb/s |
| July 2018 | 8GB | 1y-nm 16Gb LPDDR4X, 4266Mb/s |
| April 2018 | 8GB (development) | 1x-nm 8Gb LPDDR5, 6400Mb/s |
| Sept. 2016 | 8GB | 1x-nm 16Gb LPDDR4X, 4266Mb/s |
| Aug. 2015 | 6GB | 20nm (2z) 12Gb LPDDR4, 4266Mb/s |
| Dec. 2014 | 4GB | 20nm (2z) 8Gb LPDDR4, 3200Mb/s |
| Sept. 2014 | 3GB | 20nm (2z) 6Gb LPDDR3, 2133Mb/s |
| Nov. 2013 | 3GB | 2y-nm 6Gb LPDDR3, 2133Mb/s |
| July 2013 | 3GB | 2y-nm 4Gb LPDDR3, 2133Mb/s |
| April 2013 | 2GB | 2y-nm 4Gb LPDDR3, 2133Mb/s |
| Aug. 2012 | 2GB | 30nm-class 4Gb LPDDR3, 1600Mb/s |
| 2011 | 1/2GB | 30nm-class 4Gb LPDDR2, 1066Mb/s |
| 2010 | 512MB | 40nm-class 2Gb MDDR, 400Mb/s |
| 2009 | 256MB | 50nm-class 1Gb MDDR, 400Mb/s |
(Image – Samsung)
